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VBE Technology Shenzhen Co., Ltd.
VBE Technology Shenzhen Co., Ltd.
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Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W

Product Details

Place of Origin: CHINA

Brand Name: VBE

Certification: ISO

Model Number: VBE6006H

Payment & Shipping Terms

Minimum Order Quantity: 1pcs

Packaging Details: Neutral Packing

Delivery Time: 5-8 working days

Supply Ability: 10K

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Specifications
Highlight:

high frequency power transistor

,

rf power amplifier transistor

Condition:
Brand New And Original
Condition:
Brand New And Original
Description
Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W

Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W 0'

Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W 1

Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W 2

Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W 3

Solid Material High Speed RF Power Transistor Wide Band DC To 3GHz 120W 4

 

 

 

 

 

 

 

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